maximum ratings c ollec t or-emitt er v oltage c ollec t or-b ase v oltage c ollec t or c ur r en t-c on tinuous symbol v ceo v cbo v ebo i c v alue -400 -400 -6.0 unit vdc vdc vdc ma dc -150 rating maximum power dissipation total power dissipation (ta=25c) junction temperature characteristics t j p d symbol max 350 +150 unit mw c c thermal characteristics device marking characteristics symbol min max unit electrical characteristics (t a =25c unless otherwise noted) v (br)ceo v (br)cbo v (br)ebo i cbo i ebo -100 -100 vdc vdc vdc nadc nadc off characteristics mmbta94 1 2 3 base collect or emitter sot -23 -400 -400 -6.0 - - - - - 1 2 3 weitron http://www.weitron.com.tw 1/4 rev.a 11-jun-06 emitter-base voltage storage temperature t stg -55 to +150 mmbta94=4z collector-emitter breakdownvoltage (ic=-1.0madc. ib=0) collector-base breakdown voltage (ic=-100 adc, ie=0) emitter-base breakdown voltage (ie=-10 uadc, ic=0) collect cuto current (vcb= -400vdc, ie=0) emitte cuto current (veb=-6v, ic=0) i ces -500 nadc - emitte cuto current (vce=-400v, veb=0v) le a d( p b)- f r ee p b high-voltage pnp transistor surface mount
output capacitance (vce = -10 vdc, f=1.0 mhz) cob 4 - - - - 6 pf dc c u r r e n t g ain* c olle c t or-emit t er s a tu r a tion v oltage* (i c = -1.0m a d c , i b = -0.1m a dc) b ase-emit t er s a tu r a tion v oltage* (i c = -10 m a d c , i b = -1.0 m a dc) h fe(1) h fe(2) h fe(3) v ce(s a t) v be(s a t) - vdc vdc 50 75 60 - 200 - on characteristics electrical characteristics (t a =25?c unless otherwise noted) (countinued) characteristics symbol unit min max 0.20 0.90 - - mmb t a94 (i c = -50m a d c , i b = -5m a dc) (i c = -10m a d c , i b = -1m a dc) h fe(4) 20 . 0.30 0.60 weitron http://www.weitron.com.tw 2/4 rev.a 11-jun-06 (v ce =-10vdc, i c = -1.0 m a d c ) (v ce =-10vdc, i c = -10 m a d c ) (v ce =-10vdc, i c = -50 m a d c ) (v ce =-10vdc, i c = -100 m a d c ) *pulse test : pulse width 380 s, duty cycle 2.0%.
mmb t a94 weitron http://www .weitron.com.tw 3/4 rev.a 11-jun-07 characteristics curve capacitance & reverse-biased voltage 1 1 0 10 0 0 . 1 1 1 0 10 0 r e v e r s e - b i a s e d v o l t ag e ( v ) capacitance (pf) c o b current gain & collector current 1 1 0 10 0 100 0 1 1 0 10 0 100 0 c o l l e c t o r c u r r e n t - i c ( m a ) hfe 2 5 o c 7 5 o c 12 5 o c h f e @ v c e = 3 v current gain & collector current 1 0 10 0 100 0 1 1 0 10 0 100 0 c o ll e c t o r c u rr e n t - i c (m a ) hfe 2 5 o c 7 5 o c 12 5 o c hf e @ v c e = 10 v saturation voltage & collector current 1 0 1 0 0 1 0 0 0 1 1 0 10 0 10 0 0 c o ll e c t o r c u rr e n t - i c ( m a ) saturation voltage (mv) 2 5 o c 7 5 o c 12 5 o c v c e( s a t ) @ i c = 10 i b saturation voltage & collector current 10 0 100 0 1 1 0 10 0 100 0 c o ll e c t o r c u rr e n t - i c (m a ) saturation voltage (mv) 2 5 o c 7 5 o c 12 5 o c v be( s a t ) @ i c = 10 i b
mmb t a94 a b d e g m l h j t op vi e w dim a b c d e g h j k l m min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 k c so t -23 so t -23 package outline dimension weitron http://www .weitron.com.tw 4/4 rev.a 11-jun-07
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